Semiconductor device and switching circuit

Abstract

A semiconductor device includes: a resistor; a gallium nitride (GaN) power element; and a drive circuit configured to drive the GaN power element based on a pulse voltage, wherein the drive circuit includes a Schmitt trigger circuit, a high-side switch, and a low-side switch, wherein the pulse voltage is applied to a first end of the resistor, wherein a second end of the resistor is connected to an input terminal of the Schmitt trigger circuit and a first terminal of the high-side switch, wherein a second terminal of the high-side switch is connected to a first terminal of the low-side switch, and wherein each of the high-side switch and the low-side switch is switch-controlled based on an output of the Schmitt trigger circuit.

Dependencies are inferred from the claim text.