US 2026/0221391 A1Published application

Substrate processing apparatus and substrate processing method

AssigneeTokyo Electron Limited

InventorsEiichi KOMORI, Eito OGURA

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Abstract

Substrate processing apparatus includes: processing chamber; mounting table situated in processing chamber and on which substrate is mounted; gas supply mechanism facing mounting table and supplying processing gas to substrate; processing region formed between mounting table and gas supply mechanism; gas exhaust region via which gas is exhausted by gas exhaust part; first gas exhaust path that is formed in gap between mounting table and gas supply mechanism and through which processing gas flows from processing region to gas exhaust region; second gas exhaust path provided in gas supply mechanism and connecting processing region to gas exhaust region such that processing gas can flow; third gas exhaust path through which processing gas is exhausted from gas exhaust region; and controller. Controller adjusts substrate processing condition based on gap between mounting table and gas supply mechanism, supply conditions of processing gas supplied from gas supply mechanism, and pressure in processing chamber.

Claims14

Dependent claims

A substrate processing apparatus, comprising:

a processing chamber;
a mounting table that is situated in the processing chamber and on which a substrate is mounted;
a gas supply mechanism situated so as to face the mounting table and configured to supply a processing gas to the substrate;
a processing region formed between the mounting table and the gas supply mechanism;
a gas exhaust region via which a gas is exhausted by a gas exhaust part;
a first gas exhaust path that is formed in a gap between the mounting table and the gas supply mechanism and through which the processing gas flows from the processing region to the gas exhaust region;
a second gas exhaust path provided in the gas supply mechanism and connecting the processing region to the gas exhaust region such that the processing gas can flow from the processing region to the gas exhaust region;
a third gas exhaust path through which the processing gas is exhausted from the gas exhaust region;
and
a controller,
wherein the controller is configured to adjust a processing condition of the substrate based on the gap between the mounting table and the gas supply mechanism, a supply condition of the processing gas supplied from the gas supply mechanism, and a pressure in the processing chamber.

8 more elements

A substrate processing method of a substrate processing apparatus including:

a processing chamber;
a mounting table that is situated in the processing chamber and on which a substrate is mounted;
a gas supply mechanism situated so as to face the mounting table and configured to supply a processing gas to the substrate;
a processing region formed between the mounting table and the gas supply mechanism;
a gas exhaust region via which a gas is exhausted by a gas exhaust part;
a first gas exhaust path that is formed in a gap between the mounting table and the gas supply mechanism and through which the processing gas flows from the processing region to the gas exhaust region;
a second gas exhaust path provided in the gas supply mechanism and connecting the processing region to the gas exhaust region such that the processing gas can flow from the processing region to the gas exhaust region;
and a third gas exhaust path through which the processing gas is exhausted from the gas exhaust region, the substrate processing apparatus being configured to perform processing on the substrate,
the substrate processing method comprising:
adjusting a processing condition of the substrate based on the gap between the mounting table and the gas supply mechanism, a supply condition of the processing gas supplied from the gas supply mechanism, and a pressure in the processing chamber.

7 more elements

Dependencies are inferred from the claim text.