Storing data on multi-level cell memory cells
AssigneeMicron Technology, Inc.
InventorsRoy Leonard, Dave Holmstrom, Joseph L. Turmes
Life of this patent
Estimating the term…
Loading patent…
AssigneeMicron Technology, Inc.
InventorsRoy Leonard, Dave Holmstrom, Joseph L. Turmes
Estimating the term…
This disclosure is directed to a system for high efficiency storage in high capacity non-volatile solid state applications. The system includes a memory device and a processing device operatively coupled to the memory device. The processing device performs operations including receiving a request to program data, storing the data by default in a first type of storage with multi-level memory cells having a first number of levels, and bypassing a second type of storage with fewer levels. Upon detecting a condition, the processing device transfers the data to a third type of storage with a greater number of levels than the first type. This method optimizes storage efficiency and performance by dynamically managing data storage based on the portion of user logical block addresses that contain user data.
A memory system comprising:
At least one non-transitory machine-readable storage medium comprising instructions that, when executed by a processing device operatively coupled to a memory device, cause the processing device to perform operations comprising:
A method comprising:
Dependencies are inferred from the claim text.