Photoresist
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Tsing Hua University
InventorsJui-Hsiung LIU, Burn Jeng LIN, Pei-Chi WU, Chun-Tai HUANG, Kuei-Shun CHEN, An-Ren ZI, Shi-Cheng WANG
Life of this patent
Estimating the term…
Abstract
A photoresist composition comprises a first photoresist. The first photoresist has a formula (a1) or a formula (a2): and wherein each of R and R′ in the formula (a1), R1, R2 and R in the formula (a2), individually is H, n-CnH2n+1, i-CnH2n+1, or t-CnH2n+1, or one of formulae (b) to (e): in which R in the formulae (b) to (e) is a moiety including H, n-CnH2n+1, i-CnH2n+1, or t-CnH2n+1, n in the moiety is an integer from 1 to 5, n in the formula (a1) is an integer from 0 to 6, m in the formula (a2) is an integer from 0 to 6, x in the formula (a2) is an integer from 0 to 6.
Claims20
A photoresist composition, comprising:
- a first photoresist, wherein the first photoresist has a formula (a1) or a formula (a2):
- and wherein each of R and R′ in the formula (a1), R1, R2 and R in the formula (a2), individually is H, n-CnH2n+1, i-CnH2n+1, or t-CnH2n+1, or one of formulae (b) to (e):
- in which R in the formulae (b) to (e) is a moiety including H, n-CnH2n+1, i-CnH2n+1, or t-CnH2n+1, n in the moiety is an integer from 1 to 5, n in the formula (a1) is an integer from 0 to 6, m in the formula (a2) is an integer from 0 to 6, x in the formula (a2) is an integer from 0 to 6.
A lithography method, comprising:
- forming a target layer over a substrate;
- applying a photoresist composition over the target layer to form a photoresist layer, wherein the photoresist composition comprises a first photoresist having a formula (a1) or a formula (a2):
- and wherein each of R and R′ in the formula (a1), R1, R2 and R in the formula (a2), individually is H, n-CnH2n+1, i-CnH2n+1, or t-CnH2n+1, or one of formulae (b) to (e):
- in which R in the formulae (b) to (e) is a moiety including H, n-CnH2n+1, i-CnH2n+1, or t-CnH2n+1, n in the moiety is an integer from 1 to 5, n in the formula (a1) is an integer from 0 to 6, m in the formula (a2) is an integer from 0 to 6, x in the formula (a2) is an integer from 0 to 6;
- exposing the photoresist layer;
- developing the photoresist layer;
- and
- etching the target layer using the photoresist layer as an etch mask.
An extreme ultraviolet lithography (EUVL) method, comprising:
- turning on a droplet generator to eject a metal droplet toward a zone of excitation in front of a collector;
- turning on a laser source to emit a laser toward the zone of excitation, such that the metal droplet is heated by the laser to generate EUV radiation;
- guiding the EUV radiation, by using one or more first optics, toward a reflective mask in an exposure device;
- and
- guiding the EUV radiation, by using one or more second optics, reflected from the reflective mask toward a photoresist layer coated substrate in the exposure device, wherein the photoresist layer is formed by applying a photoresist composition comprising a first photoresist, the first photoresist has a formula (a1) or formula (a2):
- and wherein each of R and R′ in the formula (a1), R1, R2 and R in the formula (a2), individually is H, n-CnH2n+1, i-CnH2n+1, or t-CnH2n+1, or one of formulae (b) to (e):
- in which R in the formulae (b) to (e) is a moiety including H, n-CnH2n+1, i-CnH2n+1, or t-CnH2n+1, n in the moiety is an integer from 1 to 5, n in the formula (a1) is an integer from 0 to 6, m in the formula (a2) is an integer from 0 to 6, x in the formula (a2) is an integer from 0 to 6.
Dependencies are inferred from the claim text.