A method of patterning a two-dimensional material for the use in the manufacture of an electronic device

Abstract

The present disclosure relates to a method of patterning a two-dimensional material for use in the manufacture of an electronic device, the method comprising: (i) providing a two-dimensional material layer (205) on a surface of a substrate (200); (ii) forming a molybdenum oxide layer (215) on the two-dimensional material layer (205) to provide a first stack comprised of the two-dimensional material and molybdenum oxide layers (205, 215), the molybdenum oxide layer (215) having a thickness of at least 0.1 nm; (iii) patterning the first stack to provide one or more patterned second stacks on the substrate; and (iv) etching at least a portion of the molybdenum oxide layer (215) from one or more of the patterned second stacks to expose an underlying portion of the two-dimensional material layer (205). The method is particularly suitable in the manufacture of gas sensors and biosensors.

Dependencies are inferred from the claim text.