Systems for controlled precursor delivery to a plurality of deposition chambers and related methods

A system comprising:

• a precursor vessel fluidly couplable to a carrier gas source
• wherein the precursor vessel is configured to:
• contain a precursor, and
• deliver a vapor comprising the precursor and a carrier gas, to a plurality of deposition chambers;
• a control valve,
• wherein the control valve is configured to maintain a sensed total pressure of the vapor in the precursor vessel;
• and
• wherein the control valve is located in a flow path of the carrier gas at a location upstream of the precursor vessel;
• and
• at least one pressure sensor,
• wherein the at least one pressure sensor is located in a flow path of the vapor between the control valve and the plurality of deposition chambers.

A method comprising:

• flowing a vapor comprising a vaporized precursor and a carrier gas, from a precursor vessel to a plurality of deposition chambers;
• measuring a pressure of the vapor comprising the vaporized precursor and the carrier gas, at a location upstream of the plurality of deposition chambers,
• controlling, via the control valve, a carrier gas flow from a carrier gas source to the precursor vessel, based on the measured pressure, to maintain a concentration of the vaporized precursor and/or the carrier gas, in the vapor, at or about a set point concentration;
• adjusting the set point concentration to a second set point concentration;
• and
• adjusting a flowrate of the vapor comprising the vaporized precursor and the carrier gas, to at least one of the plurality of deposition chambers.