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US 2026/0218364 A1Published application
Coating structure
AssigneesSamsung Electronics Co., Ltd., Korea University Research and Business Foundation
InventorsIn-Hwan LEE, Kang-Bin BAE, Jung Kyun NA, Byeong Sang KIM, Seung-Ri KIM, Youn Seon WANG
Life of this patent
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Abstract
A coating structure includes: a buffer layer on a base material; and an exposed layer on the buffer layer, wherein each of the buffer layer and the exposed layer includes a composite material including at least a first metal element, a second metal element, and a non-metal element.
Claims20
A coating structure comprising:
- a buffer layer on a base material;
- and
- an exposed layer on the buffer layer,
- wherein each of the buffer layer and the exposed layer includes a composite material including at least a first metal element, a second metal element, and a non-metal element.
1 more element
A coating structure comprising:
- a buffer layer on a base material in a heater of a chemical vapor deposition apparatus;
- and
- an exposed layer on the buffer layer,
- wherein each of the buffer layer and the exposed layer includes at least a first metal element, a second metal element, and oxygen,
- wherein a content of the metal element in the buffer layer is greater than a content of the metal element in the exposed layer, and
- wherein a content of the oxygen in the exposed layer is greater than a content of the oxygen in the buffer layer.
3 more elements
A coating structure comprising:
- a buffer layer on a base material;
- and
- an exposed layer on the buffer layer,
- wherein each of the buffer layer and the exposed layer includes at least a first metal element, a second metal element, and oxygen,
- wherein a content of the metal element in the buffer layer is greater than a content of the metal element in the exposed layer,
- wherein a content of the oxygen in the exposed layer is greater than a content of the oxygen in the buffer layer,
- wherein the buffer layer and the exposed layer are formed by solid-solutioning a second metal element-based material including the second metal element and the oxygen into a first metal element-based material including the first metal element and the oxygen,
- wherein the first metal element is yttrium (Y),
- wherein the first metal element-based material includes at least one of yttrium oxide (Y2O3) and yttrium oxyfluoride (YOF),
- wherein the second metal element includes at least one of cerium (Ce), aluminum (Al), and hafnium (Hf),
- wherein the second metal element-based material includes at least one of cerium oxide (CeO2), aluminum oxide (Al2O3), and aluminum oxyfluoride (AlOF),
- wherein a fraction of the oxygen in the buffer layer is 0.1 or more and 0.3 or less,
- wherein a fraction of the oxygen in the exposed layer is 0.5 or more and 0.8 or less,
- wherein a thickness of the buffer layer is 20 nm or more and 500 nm or less, and
- wherein a thickness of the exposed layer is 2 μm or more and 10 μm or less.
12 more elements
Dependencies are inferred from the claim text.