Phosphinimide complexes as deposition precursors for thin layers

A vapor deposition apparatus comprising:

• a reaction chamber constructed and arranged to hold at least a semiconductor substrate;
• a vapor delivery vessel comprising a composition comprising a deposition precursor, wherein the vapor delivery vessel is constructed and arranged to provide a vapor of the deposition precursor;
• a precursor distribution and removal system configured to provide the vapor of the deposition precursor from the vapor delivery vessel to the reaction chamber and to remove the vapor of the deposition precursor from the reaction chamber;
• and
• a sequence controller operably connected to the precursor distribution system and removal system, and comprising a memory provided with a program configured to control the flow of the composition comprising the deposition precursor from the vapor delivery vessel to the reaction chamber by activating the precursor distribution and removal system during one or more cycles;
• whereby, as a result of the cycles, a layer is formed on the semiconductor substrate in the reaction chamber;
• wherein the deposition precursor comprises:
• a central atom or ion (M);
• and
• at least one phosphinimide ligand (L1).

A method for forming a layer on a semiconductor substrate, comprising the steps of:

• a) providing a semiconductor substrate into a reaction chamber;
• b) executing one or more cycles, each cycle comprising:
• a deposition precursor pulse, wherein at least a part of the semiconductor substrate is contacted by a vapor of a composition comprising the deposition precursor by introducing the vapor of the deposition precursor into the reaction chamber;
• wherein the deposition precursor comprises:
• a central atom or ion (M);
• and
• at least one phosphinimide ligand (L1);
• whereby, as a result of the cycles, the layer is formed on the semiconductor substrate in the reaction chamber.