Composite wafer and method for producing composite wafer
AssigneeNGK Insulators, Ltd.
InventorsJungo KONDO, Kentaro TANI, Tomoyoshi TAI, Shun HOSONO
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AssigneeNGK Insulators, Ltd.
InventorsJungo KONDO, Kentaro TANI, Tomoyoshi TAI, Shun HOSONO
Estimating the term…
A composite wafer includes in this order: a support substrate; an amorphous layer; and a SiO2-containing substrate. The amorphous layer is in contact with a first adjacent layer and a second adjacent layer, and includes an element included in each of the first adjacent layer and the second adjacent layer. A composite wafer of another embodiment of the present disclosure includes in this order: a support substrate; an amorphous layer; and a SiO2-containing substrate having a OH group content of 100 ppm or less. The amorphous layer is in contact with a first adjacent layer and a second adjacent layer, and includes an element included in each of the first adjacent layer and the second adjacent layer. A method of producing a composite wafer of an embodiment of the present disclosure includes directly joining a support substrate and a SiO2-containing bulk.
A composite wafer, comprising in this order:
A composite wafer, comprising in this order:
A method of producing a composite wafer, the method comprising directly joining a support substrate and a SiO2-containing bulk.
A method of producing a composite wafer, the method comprising:
Dependencies are inferred from the claim text.