Semiconductor device and method of manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsYu FUKUNAGA, Tatsuki ONOMATA
Life of this patent
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Abstract
An object is to provide a technology that can enhance thermal dissipation of a semiconductor device. The semiconductor device includes: a cap nut having an upper portion with an opening, the cap nut being buried in an upper surface of a sidewall of a case except the upper portion; and an electrode including a first edge that is closer to a semiconductor element and is electrically connected to the semiconductor element, a second edge integrated into the upper portion of the cap nut, and a middle portion bent stepwise between the first edge and the second edge, the middle portion being buried in the case, wherein the cap nut and the electrode are higher in thermal conductivity than copper.
Claims6
A semiconductor device, comprising:
- a semiconductor element;
- a case having a sidewall surrounding a lateral side of the semiconductor element;
- a cap nut having an upper portion with an opening, the cap nut being buried in an upper surface of the sidewall except the upper portion;
- and
- an electrode including a first edge that is closer to the semiconductor element and is electrically connected to the semiconductor element, a second edge integrated into the upper portion of the cap nut, and a middle portion bent stepwise between the first edge and the second edge, the middle portion being buried in the case,
- wherein the cap nut and the electrode are higher in thermal conductivity than copper.
Dependencies are inferred from the claim text.