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US 2026/0215320 A1Published application
Redistribution layers and methods of fabricating the same in semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiang-Ku Shen, Dian-Hau Chen
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Abstract
A semiconductor structure includes a first dielectric layer over a metal line and a redistribution layer (RDL) over the first dielectric layer. The RDL is electrically connected to the metal line. The RDL has a curved top surface and a footing feature, where the footing feature extends laterally from a side surface of the RDL. A second dielectric layer is disposed over the RDL, where the second dielectric layer also has a curved top surface.
Claims20
A semiconductor structure, comprising:
- a first dielectric layer over a metal line;
- a redistribution layer (RDL) penetrating through the first dielectric layer to land on the metal line, the RDL having a curved top surface with rounded corners that transition into sidewalls of the RDL, wherein a width between the rounded corners of the RDL is smaller than a bottom width of the RDL;
- a second dielectric layer over the RDL;
- a conductive bump vertically extending to land on the RDL;
- and
- a solder layer over the conductive bump.
3 more elements
A semiconductor structure, comprising:
- a conductive line embedded in an inter-metal dielectric layer;
- a first dielectric layer over the conductive line and over the inter-metal dielectric layer;
- a redistribution layer (RDL) over the first dielectric layer and electrically connected to the conductive line, wherein the RDL includes a recessed top surface, a non-recessed top surface, and non-linear side surfaces;
- and
- a second dielectric layer over the RDL and over the first dielectric layer, wherein the second dielectric layer covers the non-recessed top surface and the non-linear side surfaces of the RDL without covering the recessed top surface of the RDL.
2 more elements
A method, comprising:
- providing a metal line embedded in an inter-metal dielectric layer;
- forming a first dielectric layer over the metal line;
- patterning the first dielectric layer to expose a portion of the metal line in a first opening;
- forming a pattern-forming layer over the first dielectric layer, thereby filling the first opening;
- patterning the pattern-forming layer to form a larger second opening that also exposes the first opening;
- forming a footing profile that laterally extends a bottom portion of the second opening, wherein the forming of the footing profile is performed in a separate etching process or a separate de-focusing process following the patterning of the pattern-forming layer;
- and
- forming a redistribution layer (RDL) in the second opening and the first opening such that the RDL is electrically coupled to the metal line.
5 more elements
Dependencies are inferred from the claim text.