Semiconductor structure and method of forming the same

A semiconductor structure, comprising:

• a first device layer;
• a first bonding layer disposed on the first device layer;
• a first bonding pad extending through the first bonding layer and connected to the first device layer;
• a second device layer;
• a second bonding layer disposed on the second device layer and located between the second device layer and the first bonding layer;
• and
• a second bonding pad extending through the second bonding layer and connected to the second device layer,
• wherein:
• the first bonding layer is bonded to the second bonding layer,
• the first bonding pad is bonded to the second bonding pad, and
• at least one of the first and second bonding layers comprises dielectric material comprising silicon, nitrogen, and carbon.

A method of forming a semiconductor structure, comprising:

• providing a first semiconductor substrate and a first device layer on the first semiconductor substrate;
• forming a first bonding layer on the first device layer;
• providing a second semiconductor substrate and a second device layer on the second semiconductor substrate;
• forming a second bonding layer on the second device layer;
• and
• bonding the first bonding layer to the second bonding layer, wherein at least one of the first and second bonding layers comprises dielectric material comprising silicon, nitrogen, and carbon.