Power semiconductor module

A method of manufacturing a power semiconductor module, the power semiconductor module having a switching circuit comprising:

• high-side and low-side power semiconductor devices, and a switching node between the high-side and low-side power semiconductor devices, the method comprising:
• providing a substrate which comprises:
• an electrically insulating body;
• a first electrically conductive layer arranged on a first surface of the electrically insulating body that faces the switching circuit;
• and a second electrically conductive layer arranged on a second opposite surface of the electrically insulating body, wherein the first electrically conductive layer comprises a first conductive track and the second electrically conductive layer comprises a second conductive track for coupling to a heat removal structure;
• and
• electrically connecting the first conductive track to the switching node of the switching circuit;
• wherein the first conductive track does not overlap with the second conductive track across the electrically insulating body.