Integrated circuit device

An integrated circuit device comprising:

• a lower insulating film;
• a plurality of lower metal wiring layers that extend through the lower insulating film in a vertical direction and are spaced apart from each other in a first horizontal direction;
• an upper insulating film covering the lower insulating film and the plurality of lower metal wiring layers;
• a via jumper contact unit comprising at least two contact portions and a contact connection portion, the at least two contact portions extending through the upper insulating film in the vertical direction and respectively contacting at least two lower metal wiring layers selected from the plurality of lower metal wiring layers, and the contact connection portion being connected to the at least two contact portions and overlapping a local region of the lower insulating film in the vertical direction;
• and
• an insulating etch stop layer arranged between the local region of the lower insulating film and the contact connection portion of the via jumper contact unit.

An integrated circuit device comprising:

• a lower insulating film arranged over a substrate;
• a pair of lower metal wiring layers that extend through the lower insulating film in a vertical direction and are spaced apart from each other in a first horizontal direction, wherein a local region of the lower insulating film is arranged between the pair of lower metal wiring layers;
• an insulating etch stop layer covering an upper surface of the lower insulating film and exposing respective upper surfaces of the pair of lower metal wiring layers;
• an upper insulating film covering the lower insulating film, the pair of lower metal wiring layers, and the insulating etch stop layer;
• and
• a via jumper contact unit comprising a pair of contact portions and a contact connection portion, the pair of contact portions extending through the upper insulating film in the vertical direction and respectively contacting the pair of lower metal wiring layers, and the contact connection portion being connected to the pair of contact portions and overlapping a local region of the lower insulating film in the vertical direction,
• wherein the insulating etch stop layer comprises a first portion arranged between the local region of the lower insulating film and the contact connection portion of the via jumper contact unit, the first portion of the insulating etch stop layer being in contact with a lower surface of the contact connection portion of the via jumper contact unit.