Methods of forming a semiconductor device

Abstract

A method of forming a semiconductor device, comprising: (a) providing a semiconductor substrate comprising a metal layer; (b) forming an organic underlayer on the metal layer from an organic underlayer coating composition comprising a crosslinkable compound and a solvent, wherein the organic underlayer is self-crosslinkable and is substantially free of acid generators; (c) curing the organic underlayer, thereby crosslinking the organic underlayer; (d) patterning the cured organic underlayer, thereby exposing regions of the metal layer that are not covered by the patterned organic underlayer; (e) applying an overcoat coating composition on the substrate comprising the patterned organic underlayer, wherein the overcoat coating composition comprises a crosslinkable compound that is crosslinkable with the patterned organic underlayer; and an organic solvent; wherein the overcoat coating composition is substantially free of acid generators; (f) curing the overcoat coating composition to cause crosslinking between the compound and the patterned organic underlayer, wherein the resulting overcoat comprises a first portion that is crosslinked with the organic underlayer and a second portion that is not crosslinked with the organic underlayer; (g) removing the second portion of the overcoat from the substrate with an organic-based solution; and (h) wet etching the metal layer using the patterned organic underlayer and the first portion of the overcoat as an etching mask. The methods find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.

Dependencies are inferred from the claim text.