High dynamic range pixel
AssigneeSTMicroelectronics International N.V.
InventorArthur ARNAUD
Life of this patent
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Abstract
A high dynamic range pixel is formed in a portion of a semiconductor substrate that extends vertically across an entire thickness of the substrate between first and second surfaces, and is laterally delimited by a vertical insulating structure. A first pinned photodiode and a second pinned photodiode are arranged in this portion. The first pinned photodiode extends vertically across only part of the thickness of the substrate, on the side of the first surface. The second pinned photodiode extends vertically in the substrate between the first and second surfaces and comprises a first portion arranged between the first pinned photodiode and the second surface and a second portion arranged between the first pinned photodiode and the vertical insulating structure.
Claims14
A high dynamic range pixel, comprising:
- a portion of a semiconductor substrate extending vertically across the entire thickness of the substrate from a first surface to a second surface of the substrate, and being laterally delimited by a vertical insulating structure;
- and
- a first pinned photodiode and a second pinned photodiode arranged in said portion, in which:the first pinned photodiode extends vertically across only part of the thickness of the substrate, on the side of the first surface, and is configured to sense a first range of wavelengths;
- and the second pinned photodiode extends vertically across the substrate between the first and second surfaces, comprises a first portion arranged between the first pinned photodiode and the second surface and a second portion arranged between the first pinned photodiode and the vertical insulating structure, and is also configured to sense the first range of wavelengths.
Dependencies are inferred from the claim text.