Semiconductor device using nitrogen-doped silicon oxide and its manufacturing method

A method for manufacturing a semiconductor device, the method comprising:

• forming a source electrode and a drain electrode on a substrate to be spaced apart from each other;
• forming an active layer on the substrate exposed between the source electrode and the drain electrode such that one side is in contact with the source electrode and an other side is in contact with the drain electrode;
• forming a first gate insulating layer on the substrate to cover the source electrode, the drain electrode, and the active layer;
• forming a second gate insulating layer on the first gate insulating layer;
• and
• forming a gate electrode on the second gate insulating layer, in which
• the first gate insulating layer and the second gate insulating layer are all formed by plasma enhanced atomic layer deposition (PEALD) using a precursor including silicon (Si) and a reactant including nitrogen (N) and oxygen (O).

A semiconductor device comprising:

• a source electrode disposed on a substrate;
• a drain electrode disposed on the substrate to be spaced apart from the source electrode;
• an active layer disposed on the substrate exposed between the source electrode and the drain electrode such that one side is in contact with the source electrode and an other side is in contact with the drain electrode;
• a first gate insulating layer covering the source electrode, the drain electrode, and the active layer and including a nitrogen-doped silicon oxide;
• a second gate insulating layer disposed on the first gate insulating layer and including a nitrogen-doped silicon oxide;
• and
• a gate electrode disposed on the second gate insulating layer, in which
• a content of nitrogen in the second gate insulating layer is greater than a content of nitrogen in the first gate insulating layer.