Semiconductor device

A semiconductor device comprising:

• a first electrode;
• a second electrode;
• a semiconductor member provided between the first electrode and the second electrode in a first direction, the first direction extending from the first electrode toward the second electrode;
• a third electrode provided between the first electrode and the second electrode;
• and
• a first insulating member, at least a part of the first insulating member being provided between the third electrode and the semiconductor member,
• the third electrode including a first conductive portion and a second conductive portion,
• the second conductive portion being between the first electrode and the first conductive portion in the first direction,
• the semiconductor member including
• a first semiconductor region of a first conductivity type,
• a second semiconductor region of a second conductivity type, and
• a third semiconductor region of the first conductivity type,
• the first semiconductor region including a first partial region and a second partial region,
• the first partial region being between the first electrode and the second conductive portion in the first direction,
• at least a part of the second semiconductor region being between the second partial region and the third semiconductor region,
• the third semiconductor region being electrically connected to the second electrode,
• the first conductive portion facing the second partial region, the second semiconductor region, and the third semiconductor region in a second direction crossing the first direction,
• the first insulating member including
• a first insulating portion between the first conductive portion and the semiconductor member in the second direction, and
• a second insulating portion between the second conductive portion and the semiconductor member in the second direction,
• a first length of the first insulating portion along the second direction being shorter than a second length of the second insulating portion along the second direction.