Sic semiconductor device with mesa structure and sidewall wiring
AssigneeRohm Co., Ltd.
InventorsKenji YAMAMOTO, Seigo MORI, Hiroaki SHIRAGA, Yuki NAKANO, Masaya UENO
Life of this patent
Estimating the term…
Abstract
A SiC semiconductor device includes a SiC chip having a main surface that includes a first surface, a second surface hollowed in a thickness direction outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface, a trench structure formed at the first surface such as to be exposed from the connecting surface, and a sidewall wiring that is formed on the second surface such as to cover the connecting surface and that is electrically connected to the trench structure.
Claims20
A semiconductor device comprising:
- a semiconductor chip having a main surface that includes a first surface, a second surface hollowed in a thickness direction at a first depth outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface;
- a transistor structure formed at an inward portion of the first surface, the transistor structure including a trench gate structure that has a second depth less than the first depth ;
- and
- a dummy structure formed at a peripheral edge portion of the first surface, the dummy structure including a plurality of dummy trench source structures each of which has the third depth and that adjoin each other in the one direction.
A semiconductor device comprising:
- a semiconductor chip having a main surface that includes a first surface, a second surface hollowed in a thickness direction at a first depth outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface;
- a transistor structure formed at an inward portion of the first surface, the transistor structure including a trench gate structure that has a second depth less than the first depth;
- and
- a dummy structure formed at a peripheral edge portion of the first surface, the dummy structure including a dummy trench gate structure having the second depth and a dummy trench source structure that has the third depth and that adjoins the dummy trench gate structure in the one direction, wherein the semiconductor chip is a wide bandgap semiconductor chip.
Dependencies are inferred from the claim text.