US 2026/0214927 A1 · SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE PATTERN

Abstract

A semiconductor device includes: a substrate including an active pattern; a first channel structure overlapping the active pattern; a gate electrode including an electrode portion between the active pattern and the first channel structure; a semiconductor layer contacting the first channel structure; and a source/drain pattern contacting the first channel structure, wherein the first channel structure includes: a first upper channel layer; a first lower channel layer; and a first intervening channel layer disposed between the first upper channel layer and the first lower channel layer, wherein the semiconductor layer contacts a sidewall of the first upper channel layer, a sidewall of the first lower channel layer, and a sidewall of the first intervening channel layer, and wherein the semiconductor layer and the first intervening channel layer include a semiconductor material that is different from a semiconductor material of the first upper channel layer and the first lower channel layer.

Claims20

Dependent claims

A method of manufacturing a semiconductor device, comprising:

forming a preliminary channel structure and a material layer;
etching the material layer and the preliminary channel structure to form a material pattern and a channel structure;
forming a source/drain pattern on the material pattern and the channel structure;
removing the material pattern;
forming a semiconductor layer on the source/drain pattern and the channel structure;
forming a gate dielectric layer on the semiconductor layer;
and
forming a gate electrode on the gate dielectric layer.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device including an active pattern

Life of this patent

Semiconductor device including an active pattern

Life of this patent

Abstract

Claims20