Silicon carbide based-lateral power semiconductor device, and method for manufacturing same

A method for manufacturing a silicon carbide-based lateral power semiconductor device, comprising:

• forming, on a substrate of the first conductive type formed of silicon carbide, a drift layer of the first conductive type with a relatively low impurity concentration compared to the substrate;
• forming a buffer trench by etching from an upper surface of the drift layer into the drift layer to a predetermined depth;
• implanting ions of a second conductive type into an upper region of the drift layer using a predetermined first mask, thereby forming a body region of the second conductive type spaced apart from the buffer trench in a first direction and a collector region of the second conductive type spaced apart from the buffer trench in a second direction opposite to the first direction;
• and
• forming an emitter region by implanting ions of the first conductive type into an upper region of the body region using a preset second mask, and forming a buffer region surrounding at least one of two sides and a bottom of the buffer trench by vertically and obliquely implanting ions of the first conductive type into the buffer trench.