Semiconductor device
AssigneeRohm Co., Ltd.
InventorsKazumasa NISHIO, Kosaku ADACHI
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, a resistor embedded in the insulating layer and formed by electrically connecting a plurality of resistance layers, a first electrode connected electrically to a first end of the resistor, a second electrode connected electrically to a second end of the resistor, and a plurality of first dummy wiring lines arranged around the first electrode and respectively coupled capacitively to the plurality of resistance layers in the resistor.
Claims22
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating layer provided on the semiconductor substrate;
- a resistor embedded in the insulating layer and formed by electrically connecting a plurality of resistance layers;
- a first electrode connected electrically to a first end of the resistor;
- a second electrode connected electrically to a second end of the resistor;
- and
- a plurality of first dummy wiring lines arranged around the first electrode and respectively coupled capacitively to the plurality of resistance layers in the resistor.
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating layer provided on the semiconductor substrate;
- a resistor embedded in the insulating layer and formed by electrically connecting a plurality of resistance layers;
- a first electrode connected electrically to a first end of the resistor;
- a second electrode connected electrically to a second end of the resistor;
- and
- a plurality of first dummy resistance layers arranged around the first electrode and respectively coupled capacitively to the plurality of resistance layers in the resistor.
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating layer provided on the semiconductor substrate;
- a resistor embedded in the insulating layer and formed by electrically connecting a plurality of resistance layers;
- a first electrode connected electrically to a first end of the resistor;
- a second electrode connected electrically to a second end of the resistor;
- and
- a plurality of first dummy wiring lines arranged around the first electrode and respectively connected electrically to the plurality of resistance layers in the resistor.
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating layer provided on the semiconductor substrate;
- a resistor embedded in the insulating layer and formed by electrically connecting a plurality of resistance layers;
- a first electrode connected electrically to a first end of the resistor;
- a second electrode connected electrically to a second end of the resistor;
- and
- a plurality of first dummy resistance layers arranged around the first electrode and respectively connected electrically to the plurality of resistance layers in the resistor.
Dependencies are inferred from the claim text.