Substrate and method of manufacturing the same

A method of manufacturing a substrate comprising:

• forming a first dielectric layer which has a first bottom surface, a first top surface and a first through hole, the first through hole has a first opening, a second opening and a first ring wall, the first opening is adjacent to the first bottom surface, the second opening is visible on the first top surface, and the first ring wall is located between the first and second openings;
• forming a first conduction layer on the first top surface of the first dielectric layer and in the first through hole of the first dielectric layer, the first conduction layer includes a first bottom portion, a first ring portion and a first space, the first bottom portion is in the first opening, the first ring portion is located on the first ring wall and surrounds the first space;
• forming a first photoresist layer on the first conduction layer and patterning the first photoresist layer to form a first filling hole, the first bottom portion, the first ring portion and the first space of the first conduction layer are visible from the first filling hole;
• forming a first conductive material in the first space of the first conduction layer, the first conductive material has a first conduction surface and a second conduction surface, and the first conduction surface is electrically connected to the first bottom portion of the first conduction layer;
• removing the first photoresist layer;
• using the first conductive material as a mask to remove the first conduction layer not covered by the first conductive material;
• forming a second dielectric layer to cover the first dielectric layer, the second dielectric layer has a second bottom surface, a second top surface and a second through hole which is located above the first through hole of the first dielectric layer, the first conductive material is visible from the second through hole, the second through hole has a third opening, a fourth opening and a second ring wall, the third opening is located between the second opening of the first through hole and the fourth opening and is adjacent to the second bottom surface, the fourth opening is visible on the second top surface, the second ring wall is located between the third and fourth openings, and a width of the third opening is less than that of the first opening of the first through hole;
• forming a second conduction layer on the second top surface of the second dielectric layer and in the second through hole of the second dielectric layer, the second conduction layer includes a second bottom portion, a second ring portion and a second space, the second bottom portion is located in the third opening of the second through hole and is electrically connected to the first conductive material, the second ring portion is located on the second ring wall and surrounds the second space;
• forming a second photoresist layer on the second conduction layer and patterning the second photoresist layer to form a second filling hole, the second bottom portion, the second ring portion and the second space of the second conduction layer are visible from the second filling hole;
• forming a second conductive material in the second space of the second conduction layer, the second conductive material has a third conduction surface and a fourth conduction surface, and the third conduction surface is electrically connected to the second bottom portion of the second conduction layer;
• removing the second photoresist layer;
• and
• using the second conductive material as a mask to remove the second conduction layer not covered by the second conductive material, wherein the first conduction layer, the first conductive material, the second conduction layer and the second conductive material form a stack via.