Circuits and methods for leakage reduction in mos devices
AssigneepSemi Corporation
InventorBuddhika ABESINGHA
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AssigneepSemi Corporation
InventorBuddhika ABESINGHA
Estimating the term…
Various methods and circuital arrangements for leakage reduction in MOS devices are presented. A pull-up circuit is selectively coupled to a gate of the MOS device to provide control of a voltage to the gate that is larger than a source voltage. Voltage switching circuits selectively couple different voltages to the body and/or back-gate terminals of the MOS device. During a standby mode of operation, the leakage current of the MOS device is decreased by driving the MOS device further into its subthreshold leakage region. During standby mode, a threshold voltage of the MOS device is increased by coupling a voltage higher than the source voltage to the body and/or back gate terminals. The MOS device can be a pass device used in low dropout regulator (LDO). During standby mode, the LDO maintains output regulation by driving the MOS device further into its subthreshold leakage region and/or increasing the threshold voltage.
(canceled)
A low voltage regulator, comprising:
A method of controlling a low voltage regulator comprising a PMOS pass device coupled between a supply voltage and an output terminal, the method comprising:
Dependencies are inferred from the claim text.