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US 2026/0213725 A1Published application
Doped crystalline piezoelectric resonator films and methods of forming doped single crystalline piezoelectric resonator layers on substrates via epitaxy
AssigneeAkoustis Technologies Corp.
InventorsCraig Moe, Jeffrey M. Leathersich, Dao Ho Kim, Zhiqiang Bi, Mary Winters
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Abstract
A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and/or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.
Claims18
A method of forming a piezoelectric resonator, the method comprising:
- introducing Al and N into a reaction chamber containing a substrate;
- introducing Si into the reaction chamber in an amount to dope an AlN layer with the Si in a range between 1E17 per cubic centimeter and 3.5E17 per cubic centimeter;
- and
- forming a remainder of a AlN single crystalline piezoelectric resonator on the AlN layer doped with the Si.
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A method of forming a piezoelectric resonator, the method comprising:
- introducing Al and N into a reaction chamber containing a substrate;
- introducing Sc into the reaction chamber in an amount to dope an AlN layer with the Sc at a concentration of the Sc up to 1E19 per cubic centimeter;
- and
- forming a remainder of a AlN single crystalline piezoelectric resonator on the AlN layer doped with the Sc.
1 more element
Dependencies are inferred from the claim text.