Light-emitting device and light-emitting module

A light-emitting device comprising:

• a substrate having a recess;
• a vertical-cavity light-emitting element made of a group III-nitride semiconductor mounted on a bottom surface of the recess of the substrate;
• a photodetector mounted on a bottom surface of the recess of the substrate;
• a transmissive plate sealing an opening of the recess;
• and
• a light-reflecting structure formed in a region of the transmissive plate, the region being other than a main light incident region as a region where a main light emitted from the vertical-cavity light-emitting element to form a beam spot is incident, wherein
• the vertical-cavity light-emitting element includes:
• a transparent substrate;
• a first multilayer reflector formed on the transparent substrate;
• a semiconductor structure layer including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, the first semiconductor layer being made of a semiconductor having a first conductivity type formed on the first multilayer reflector, the light-emitting layer being formed on the first semiconductor layer, the second semiconductor layer having a second conductivity type opposite to the first conductivity type formed on the light-emitting layer;
• and
• a second multilayer reflector formed on the semiconductor structure layer and constituting an optical cavity between the first multilayer reflector and the second multilayer reflector, wherein
• the vertical-cavity light-emitting element is mounted such that a bottom surface of the recess faces a top surface of the second multilayer reflector, and
• the semiconductor structure layer has an insulating portion formed in an annular region in top view, and a region surrounded by the annular region is located in a region inside an outer edge of the second multilayer reflector in top view.

A light-emitting module comprising:

• a light-emitting device including:
• a substrate having a recess;
• a vertical-cavity light-emitting element mounted on a bottom surface of the recess of the substrate and including a group III-nitride semiconductor, the vertical-cavity light-emitting element emitting a laser light toward an opening of the recess, the laser light including a main light forming a beam spot and a secondary light, the secondary light being emitted in a direction different from the main light and having a lower light output than the main light;
• a photodetector mounted on a bottom surface of the recess of the substrate;
• a transmissive plate sealing an opening of the recess;
• and a light-reflecting structure formed in a region of the transmissive plate, the region being other than a main light incident region as a region where the main light is incident;
• and
• an output control unit electrically connected to each of the vertical-cavity light-emitting element and the photodetector and capable of controlling an output of a laser light of the vertical-cavity light-emitting element, wherein
• the output control unit controls the output of the laser light of the vertical-cavity light-emitting element in accordance with a light intensity received by the photodetector.