Memory device and memory system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSoyeong Shin, Daehyun Kwon, Seungjun Bae
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsSoyeong Shin, Daehyun Kwon, Seungjun Bae
Estimating the term…
A memory device includes a buffer configured to compare a data signal to a reference voltage and generate an amplified signal, a summation circuit configured to generate a summation output signal based on the amplified signal, and a sampler including a sampling circuit configured to generate a sampling signal by sampling the summation output signal based on a clock signal, and a first equalization circuit coupled to the sampling circuit and configured to equalize the sampling signal based on a feedback sampling signal sampled prior to the sampling signal. The first equalization circuit includes (i) a first transistor circuit configured to receive the feedback sampling signal and (ii) a second transistor circuit between the first transistor circuit and the sampling circuit and configured to receive a bias voltage associated with an equalization coefficient.
A memory device comprising:
A memory device comprising:
A memory system comprising:
Dependencies are inferred from the claim text.