Memory device and memory system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSoyeong Shin, Changsoo Yoon
Life of this patent
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AssigneeSamsung Electronics Co., Ltd.
InventorsSoyeong Shin, Changsoo Yoon
Estimating the term…
A memory device includes a buffer configured to compare a data signal to a reference voltage and generate an amplified signal, a summer configured to generate a summer output signal based on the amplified signal, and a sampler including a sampling circuit configured to sample the summer output signal based on a clock signal to generate a sampling signal, and a first equalization circuit structure connected to the sampling circuit and configured to equalize the sampling signal based on a feedback sampling signal sampled prior to the sampling signal. The first equalization circuit structure includes a first transistor into which the feedback sampling signal is input, a second transistor structure between the first transistor and the sampling circuit and into which a bias voltage associated with an equalization coefficient is input, and a third transistor structure disposed the first transistor and the sampling circuit.
A memory device comprising:
A memory device, comprising:
A memory system, comprising:
Dependencies are inferred from the claim text.