3D Compatible 2 Transistor-N Capacitor Ferroelectric Random Access Memory it Quasi-Nondestructive Readout Characteristics

Abstract

Embodiments can relate to techniques for sensing capacitor polarization in a random access memory (RAM) cell by: applying a read gate bias to a transistor; allowing or causing ferroelectric polarization (PFE) of a capacitor to set a threshold voltage (VTH); and performing a read operation by sensing polarization in a capacitor. Performing the read operation can occur in a quasi-nondestructive manner due to the structure of the RAM cell, which can include: plural capacitors connected to node 1, each individual capacitor also connected to an individual write bit line (WBL); a write transistor (TW) connected to: node 1, a write word line (WWL), and a write plate line (WPL); and a read transistor (TR) connected to: node 1, a read bit line (RBL), and a read source line (RSL). The RAM cell allows for performing plural read operations without a write-back operation to restore polarization in a capacitor.

Dependencies are inferred from the claim text.