Stripper composition and method of forming pattern using the same

A method, comprising:

• forming an etching target layer on a substrate;
• forming a photoresist pattern on the etching target layer;
• etching the etching target layer utilizing the photoresist pattern;
• and
• removing the photoresist pattern utilizing a stripper composition,
• wherein the stripper composition comprises:
• 5 wt % to 15 wt % of an amine compound having a molecular weight of 80 g/mol or less and a Hansen Solubility parameter (HSPo) value defined by Equation 1 in a range from 27 to 32;
• 1 wt % to 10 wt % of a tetra-ammonium salt;
• 5 wt % to 15 wt % of a cyclic alcohol;
• 10 wt % to 50 wt % of a protic polar organic solvent;
• 10 wt % to 50 wt % of an aprotic polar organic solvent;
• and
• 0.05 wt % to 1 wt % a polyhydric alcohol having 4 to 6 carbon atoms, based on a total weight of 100 wt % of the stripper composition:
• H
• ⁢
• S
• ⁢
• P
• o
• =
• (
• H
• ⁢
• S
• ⁢
• P
• d
• 2
• +
• H
• ⁢
• S
• ⁢
• P
• p
• 2
• +
• H
• ⁢
• S
• ⁢
• P
• h
• 2
• )
• 0.5
• ,
• Equation
• ⁢
• 1
• wherein, in Equation 1, HSPd represents a solubility factor caused by a nonpolar dispersion bonding, HSPp represents a solubility factor caused by a polar bonding due to permanent dipoles, and HSPh represents a solubility factor caused by a hydrogen bonding, and
• wherein the method is a method of forming a pattern.