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AssigneeNissan Chemical Corporation
InventorsDaigo SAITO, Takafumi Endo, Ryo Karasawa, Rikimaru Sakamoto
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A method for producing a semiconductor substrate coated with a resist underlayer film, the method includes applying a resist underlayer film-forming composition with an enhanced thermal reflow property at the time of baking onto a semiconductor substrate having a difference in level, and baking the applied resist underlayer film-forming composition to form a resist underlayer film having a difference in level of the applied surface between a part having the difference in level of the semiconductor substrate and a part having no difference in level of the semiconductor substrate of 3 nm to 73 nm. The resist underlayer film-forming composition includes a novolac resin obtained by reacting an aromatic compound (A) with an aldehyde (B) having a formyl group bonded to a secondary carbon atom or tertiary carbon atom of a C2-26 alkyl group for lowering a glass transition temperature (Tg) of the novolac resin.
A method for producing a semiconductor substrate coated with a resist underlayer film, the method comprising:
A method for forming a resist pattern used in production of semiconductors, the method comprising:
A method for producing a semiconductor device, the method comprising:
A method for producing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.