Composite structure comprising a monocrystalline thin film on a polycrystalline silicon carbide support substrate, and associated production method
OwnerHugo Biard, Alexandre Potier +2inventors
InventorsHugo Biard, Alexandre Potier, Marc Ferrato, Christophe Bommier
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Abstract
A composite structure for manufacturing microelectronic components, includes a monocrystalline thin film on a support substrate made of polycrystalline silicon carbide, the support substrate having, on each of its faces, a preferential crystalline orientation on each of its faces, according to which: a texture coefficient C422 is less than 40%, and the sum of texture coefficients C220+C200+C400 is greater than 50%, preferably greater than 80%. A method is used to manufacture such a composite structure.
Claims20
A composite structure for manufacturing microelectronic components comprising a monocrystalline thin film on a support substrate of polycrystalline silicon carbide, the support substrate having, on each of two opposite faces of the support substrate, a preferential crystalline orientation according to which:
- a texture coefficient C422 is less than 40%, and
- a sum of texture coefficients C220+C200+C400 is greater than 50%.
A method for manufacturing a composite structure comprising a monocrystalline thin film on a support substrate of polycrystalline silicon carbide, the method comprising the following steps:
- a) providing a support substrate of polycrystalline silicon carbide having, on each of two opposite faces of the support substrate, a preferential crystalline orientation according to which:
- a texture coefficient C422 is less than 40%, and
- the sum of texture coefficients C220+C200+C400 is greater than 50%.
- b) providing a donor substrate of a monocrystalline material;
- and
- c) transferring a thin film from the donor substrate to the support substrate.
Dependencies are inferred from the claim text.