Gas inlet for a cvd reactor

A device (11) for feeding a process gas into a process chamber (4) of a chemical vapor deposition (CVD) reactor, the device (11) comprising:

• a first gas distribution body (12) arranged around an axis (A), the first gas distribution body (12) having:
• a central region (15) with an outer side surrounding the axis (A), the central region (15) having an orifice (14) of a first gas supply line (13), the orifice (14) extending only or at least over a partial circumference of the outer side;
• a first flow barrier (17, 19, 21) with an inner side (17′, 19′, 21′) pointing towards a first gas distribution chamber (16, 18, 20) of the first gas distribution body (12) and an outer side (17″, 19″, 21″) pointing away from the first gas distribution chamber (16, 18, 20);
• and
• a first plurality of gas passage channels (22, 23, 24) connecting the inner side (17′, 19′, 21′) of the first flow barrier (17, 19, 21) with the outer side (17″, 19″, 21″) of the first flow barrier (17, 19, 21) and evenly distributed over a circumference of the flow barrier (17, 19, 21) for uniformly distributing process gas emerging from the orifice (14) and distributing the process gas in the gas distribution chamber (16, 18, 20) into the process chamber (4),
• wherein the first plurality of gas passage channels (22, 23, 24) have an inlet channel with a first section (25) running in a radial direction and with a second section (25′) running in a direction parallel to the axis (A),
• wherein the second section (25′) is connected to two branch channels (26) running in a circumferential direction, and
• wherein each of the two branch channels (26) progresses into an outlet channel (27) running in the radial direction.