Composition, method of treating metal-containing film by using the composition, and method of manufacturing electronic device by using the composition

A composition comprising

• an oxidizing agent;
• an ammonium-based buffer;
• and
• an etching controller,
• wherein the etching controller includes a compound represented by Formula 1,
• wherein, in Formula 1,
• R1 is a C1-C30 alkyl group or a C2-C30 alkenyl group,
• R2 to R7 are each independently hydrogen, a C1-C30 alkyl group, or a C2-C30 alkenyl group,
• L1 and L2 are each independently a C1-C30 alkylene group or a C2-C30 alkenylene group,
• X and Z are each independently hydrogen, an alkali metal, or an ammonium group,
• at least one methylene group included in one or more of R1 to R7 is optionally substituted with O or S, and
• at least one hydrogen included in one or more of R1 to R7, L1, and L2 is optionally substituted with a halogen atom, a hydroxyl group, a thiol group, a C1-C30 alkoxy group, or a C1-C30 alkylthio group.