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US 2026/0209641 A1Published application
Liquid detergent, method for cleaning substrate, and method for producing semiconductor element
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsKohei Serizawa, Choitsu Go, Yukihisa Wada
Life of this patent
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Abstract
A liquid detergent for removing an etching residue containing an inorganic substance, the liquid detergent including a compound represented by General Formula (a1) and at least of an amine and an ammonium compound other than the compound. In General Formula (a1), —R represents —NH2 or —O—C(CH3)3. In such a liquid detergent, both removability of a dry etching residue and a property of reducing damage to a metal wiring are satisfactory, and thus safety is enhanced
Claims9
A liquid detergent for removing an etching residue containing an inorganic substance, the liquid detergent comprising:
- a compound (A) represented by General Formula (a1);
- and
- at least one base selected from the group consisting of an amine and an ammonium compound other than the compound (A),
- wherein —R represents —NH2 or —O—C(CH3)3.
1 more element
Dependencies are inferred from the claim text.