Etching composition and use thereof
AssigneeNingbo Anji Microelectronics Technology Co.
InventorsZhang CHENG, Bing LIU, Hongxiu PENG, Bing WU
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Abstract
The present invention provides an etching composition and its application. The etching composition comprises a hydroxylamine, a surfactant, a metal corrosion inhibitor, an amine pH modifier, an organic acid and water. The etching composition of the present invention can be used for the cleaning of cobalt layer processes above 7 nm, and has good cleaning ability for polymer residues, metal oxides, and fluorides after plasma ashing, as well as good compatibility with TiN and Low-K materials, and a large process operation window.
Claims12
An etching composition comprising a hydroxylamine, a surfactant, a metal corrosion inhibitor, an amine pH modifier, an organic acid, and water.
Dependencies are inferred from the claim text.