US 2026/0209129 A1 · BONDED SUBSTRATE AND METHOD FOR PRODUCING BONDED SUBSTRATE

Abstract

The present disclosure provides a bonded substrate having high bonding strength in which occurrence of voids is prevented. A bonded substrate (1) according to an aspect of the present disclosure is a bonded substrate in which a first substrate (10) and a second substrate (20) are bonded with a bonding surface (15) interposed therebetween. The first substrate (10) is a quartz-crystal substrate, and the second substrate (20) is a lithium tantalate substrate or a lithium niobate substrate. An intermediate layer (11 or 21) including silicon oxide is formed on a side of the bonding surface (15) of at least one of the first substrate (10) or the second substrate (20). A first modified layer (12) is formed on the side of the bonding surface (15) of the first substrate, a second modified layer (22) is formed on the side of the bonding surface (15) of the second substrate (20), and either of the modified layers (12 and 22) formed on the intermediate layers (11 and 21) of the first modified layer (12) and the second modified layer (22) has a thickness of 1.8 nm or more.

Claims14

Dependent claims

A bonded substrate in which a first substrate and a second substrate are bonded with a bonding surface interposed therebetween, wherein

the first substrate is a quartz-crystal substrate,
the second substrate is a lithium tantalate substrate or a lithium niobate substrate,
an intermediate layer including silicon oxide is formed on a side of the bonding surface of at least one of the first substrate or the second substrate,
a first modified layer is formed on the side of the bonding surface of the first substrate,
a second modified layer is formed on the side of the bonding surface of the second substrate, and
either of the modified layers formed on the intermediate layers of the first modified layer and the second modified layer has a thickness of 1.8 nm or more.

3 more elements

A method for producing a bonded substrate in which a quartz-crystal substrate as a first substrate and a lithium tantalate substrate or a lithium niobate substrate as a second substrate are bonded with a bonding surface interposed therebetween,

the method comprising the steps of:
(1) forming an intermediate layer including silicon oxide on a side of the bonding surface of at least one of the first substrate or the second substrate;
(2) subjecting a surface on the side of the bonding surface of the first substrate to a plasma treatment to form a first modified layer;
(3) subjecting a surface on the side of the bonding surface of the second substrate to a plasma treatment to form a second modified layer;
(4) temporarily bonding the first substrate and the second substrate in a state where the first modified layer and the second modified layer face each other;
and
(5) subjecting the temporarily bonded substrate to an annealing treatment to bond the first substrate and the second substrate, wherein either of the modified layers formed on the intermediate layers of the first modified layer and the second modified layer has a thickness of 1.8 nm or more.

4 more elements

Dependencies are inferred from the claim text.

Bonded substrate and method for producing bonded substrate

Life of this patent

Bonded substrate and method for producing bonded substrate

Life of this patent

Abstract

Claims14