Humidity sensor production method
AssigneeSüLeyman Demirel üNiversitesi Idari Ve Mali Isler Daire Baskanligi Genel Sekreterlik
InventorsMurat KALELI, Ibrahim SLAH
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Abstract
The present disclosure relates to the field of metal oxide semiconductor (MOS) sensors and relates to a humidity sensor (1) production method that enables the production of a NiOx-based humidity sensor (1) that is cost-effective, fast-responding, highly sensitive, has a wide relative humidity sensing range, stable, long-lasting, quickly recoverable, and can operate at room temperature and with low voltage by means of silver (Ag) interdigitated electrode contacts using the accumulation method.
Claims9
A humidity sensor production method that enables the production of a NiOx (Nitric Oxide) based humidity sensor formed by the accumulation method for use in the production of MOS (Metal Oxide Semiconductor) sensors, comprising the process steps of:
- preparing nickel acetate tetra dihydrate and deionised pure water solution,
- forming interdigitated electrodes by accumulating silver on the glass sensor base by the thermal evaporator,
- spraying the prepared solution on the silver electrodes accumulated on the glass sensor base on the heater, and
- accumulating the sprayed solution on the silver electrodes accumulated on the sensor base under the effect of the heater and forming the humidity sensor.
Dependencies are inferred from the claim text.