Thermal compression bonding method and a compression head for performing such method

A method for performing thermal compression bonding, comprising:

• providing a compression head, wherein a bottom surface of the compression head is coated with a transition layer comprising at least one phase change material;
• providing a semiconductor die, wherein a bottom surface of the semiconductor die is attached with one or more solder bumps;
• displacing the semiconductor die onto a substrate such that the one or more solder bumps contact a top surface of the substrate;
• pressing the semiconductor die against the substrate using the compression head, with the transition layer of the compression head in contact with a top surface of the semiconductor die;
• and
• heating the one or more solder bumps to a molten state through heat transferred from the compression head to the semiconductor die, while the phase change material is heated to a temperature higher than a first transition temperature, at which a phase transition of the phase change material begins, to soften the phase change material, such that a contact area between the transition layer and the semiconductor die increases as the transition layer is pressed.