Electronic module and manufacturing method thereof
AssigneeUltraband Technologies, Inc.
InventorsCHAN-SHIN WU, Chih-Sheng Yeh, Shiuan-Jiun Huang, Kuan-Hsiu Chien
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Abstract
An electronic module and a manufacturing method thereof are provided. The electronic module includes: a glass substrate, including an upper surface and a lower surface; and an integrated passive device (IPD) layer, arranged on at least a portion of the lower surface of the glass substrate, and including at least one IPD. A total inductance value, a total capacitance value, or a total resistance value of the IPD changes in response to laser trimming applied to the IPD through the upper surface of the glass substrate.
Claims18
An electronic module, comprising:
- a glass substrate, comprising an upper surface and a lower surface;
- and
- an integrated passive device (IPD) layer, arranged on at least a portion of the lower surface of the glass substrate, and comprising at least one IPD, wherein a total inductance value, a total capacitance value, or a total resistance value of the IPD changes in response to laser trimming applied to the IPD through the upper surface of the glass substrate.
A manufacturing method for an electronic module, comprising the following steps:
- (A) forming an IPD layer on at least a portion of a lower surface of a glass substrate, wherein the IPD layer comprises at least one IPD, and a total inductance value, a total capacitance value, or a total resistance value of the IPD changes in response to laser trimming applied to the IPD through an upper surface of the glass substrate;
- (B) forming an active and passive device RDL below the IPD layer and the glass substrate, wherein the active and passive device RDL is bonded to the IPD layer;
- (C) forming a metal heat dissipation layer on a ceramic substrate, wherein the metal heat dissipation layer and the ceramic substrate jointly define a cavity;
- (D) arranging a semiconductor chip in the cavity and above the metal heat dissipation layer;
- and
- (E) bonding the active and passive device RDL to the ceramic substrate, and causing the semiconductor chip to be electrically connected to the IPD through a conductive interconnection structure.
Dependencies are inferred from the claim text.