Irregular direct bonded metal (dbm) and connection substrate

An apparatus, comprising:

• a conductive portion of a package, including a die attach pad (DAP);
• a semiconductor die coupled to the DAP;
• and
• a direct bonded metal (DBM) substrate including at least a metal layer coupled to a dielectric layer,
• the semiconductor die and the DAP being included in a first vertical stack separated from and non-overlapping with a second vertical stack including the DBM substrate;
• and
• wherein the first vertical stack of the semiconductor die and the DAP is vertically disposed above or on a DBM recess, wherein the DBM recess is laterally adjacent to the second vertical stack of the DBM substrate.

A method of making a package, comprising:

• forming a direct bonded metal (DBM) substrate including at least a metal layer coupled to a dielectric layer;
• forming a conductive region of the package including a die attach pad (DAP);
• and
• coupling a semiconductor die to an upper surface of the DAP;
• the semiconductor die and the DAP being included in a first vertical stack separated from a second vertical stack of the DBM substrate.