Semiconductor structure and method for forming the same
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsShih-Wei Lo, Tzung-Bin Huang
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Abstract
The present disclosure provides a semiconductor structure and a method for forming the same. The semiconductor structure includes a conductive structure penetrating an interconnection structure and a substrate where the interconnection structure is disposed thereon. The conductive structure includes a through-conductive via penetrating the interconnection structure and the substrate in a vertical direction and a ring-shaped conductive via disposed in the interconnection structure and surrounding the through-conductive via. The interconnection structure includes a conductive layer configured on the ring-shaped conductive via and being directly in contact with a top surface of the ring-shaped conductive via.
Claims10
A semiconductor structure, comprising:
- a conductive structure penetrating through an interconnection structure and a substrate on which the interconnection structure is disposed, wherein the conductive structure comprises:
- a through conductive via penetrating through the interconnection structure and the substrate in a vertical direction;
- and
- a ring-shaped conductive via disposed in the interconnection structure and surrounding the through conductive via,
- wherein the interconnection structure comprises a conductive layer configured on the ring-shaped conductive via and being directly in contact with a top surface of the ring-shaped conductive via.
A method of forming a semiconductor structure, comprising:
- forming a conductive structure, wherein the conductive structure penetrates through an interconnection structure and a substrate on which the interconnection structure is formed, and the conductive structure comprises:
- a through conductive via penetrating through the substrate and the interconnection structure in a vertical direction;
- and
- a ring-shaped conductive via formed in the interconnection structure and surrounding the through conductive via,
- wherein the interconnection structure comprises a conductive layer formed on the ring-shaped conductive via and being directly in contact with a top surface of the ring-shaped conductive via.
Dependencies are inferred from the claim text.