Static random-access memory array, memory, and electronic device

Abstract

The present disclosure relates to static random-access memory arrays, production methods for the static random-access memory arrays, memories, and electronic devices. One example SRAM memory array includes a semiconductor substrate, a front-end-of-line device layer formed in the semiconductor substrate, and a back-end-of-line device layer stacked on the front-end-of-line device layer. The SRAM memory array further includes a plurality of memory cells. Each memory cell includes at least one P-type field-effect transistor and at least one N-type field-effect transistor that are electrically connected to each other, and may be, for example, a 6T memory cell or an 8T memory cell. The at least one P-type field-effect transistor is formed in the front-end-of-line device layer. The at least one N-type field-effect transistor is formed in the back-end-of-line device layer.

Dependencies are inferred from the claim text.