Apparatus for real-time line width measurement in dry etching process
OwnerKyung Hwan JEONGinventor
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Abstract
The present invention relates to an apparatus for real-time line width measurement in a dry etching process, wherein an apparatus for real-time line width measurement in a dry etching process according to the present invention includes a reaction chamber in which a dry etching process is performed, a mass spectrometer configured to measure gaseous substances in the reaction chamber during the dry etching process, and a calculation unit configured to calculate a line width (CD) using the following equation based on data measured by the mass spectrometer. CD={a1×Σ[amount of film etching byproducts]}×{a2×Σ[amount of oxygen byproducts]}×{a3×Σ[amount of fluorine byproducts]}/{a4×Σ[amount of etching gases]}, where a1, a2, a3 and a4 are predetermined proportional constants.
Claims13
An apparatus for real-time line width measurement in a dry etching process, comprising:
- a reaction chamber in which the dry etching process is performed;
- a mass spectrometer configured to measure gaseous substances in the reaction chamber during the dry etching process;
- and
- a calculation unit configured to calculate a line width (CD) using the following equation based on data measured by the mass spectrometer:
- CD
- =
- {
- a
-
- 1
- ×
- ∑
- [
- amount
-
- of
-
- film
-
- etching
-
- byproducts
- ]
- }
- ×
- {
- a
-
- 2
- ×
- ∑
- [
- amount
-
- of
-
- oxygen
-
- byproducts
- ]
- }
- ×
- {
- a
-
- 3
- ×
- ∑
- [
- amount
-
- of
-
- fluorine
-
- byproducts
- ]
- }
- /
- {
- a
-
- 4
- ×
- ∑
- [
- amount
-
- of
-
- etching
-
- gases
- ]
- }
- ,
- where a1, a2, a3 and a4 are predetermined proportional constants.
Dependencies are inferred from the claim text.