Pulse ald sequence for low fluorine wn deposition

An apparatus comprising:

• a process chamber comprising one or more showerheads in the process chamber to direct gases and one or more substrate supports;
• a controller configured to execute machine-readable instructions for depositing a tungsten nitride film using one or more deposition cycles, each deposition cycle comprising (a)-(c):
• (a) causing formation of a tungsten sublayer by:
• i) causing dosing of diborane to the process chamber and purging diborane from the process chamber one or more times;
• ii) after (i), causing dosing of tungsten hexafluoride to the process chamber and purging tungsten hexafluoride from the process chamber multiple times;
• (b) after (a), causing dosing of diborane to the process chamber and purging diborane from the process chamber;
• and
• (c) after (b), causing dosing of a nitriding agent to the process chamber to convert the tungsten sublayer to a tungsten nitride sublayer and purging the nitriding agent from the process chamber.

A method comprising:

• providing a process chamber comprising a plurality of stations;
• indexing each substrate of a plurality of substrates to a corresponding station of the plurality of stations;
• after indexing all of the plurality of substrates to the corresponding stations, reducing pressure in the process chamber below a first pressure;
• after reducing the pressure in the process chamber below the first pressure, increasing the pressure in the process chamber to a second pressure higher than the first pressure;
• and
• after increasing the pressure to the second pressure, depositing a tungsten-containing layer on each substrate of the plurality of substrates.