Back-contacted solar cell and manufacturing method therefor, and photovoltaic module

A manufacturing method for a back-contacted solar cell, comprising:

• providing a semiconductor substrate, wherein the semiconductor substrate has a first surface and a second surface that are opposite to each other;
• sequentially stacking a tunneling passivation material layer and an intrinsic amorphous silicon material layer on a side of the second surface in a thickness direction of the semiconductor substrate;
• performing phosphorus diffusion treatment on the intrinsic amorphous silicon material layer, to form an N-type doped polycrystalline silicon material layer from the intrinsic amorphous silicon material layer, and form a phosphorus-silicon glass layer on the N-type doped polycrystalline silicon material layer, wherein a ratio of a thickness of the N-type doped polycrystalline silicon material layer located on an edge region of the second surface to a thickness of the N-type doped polycrystalline silicon material layer located on a central region of the second surface is greater than or equal to 1 and less than or equal to 1.2;
• performing texturing treatment on the first surface to form a textured surface from the first surface under a mask of the phosphorus-silicon glass layer;
• performing patterning treatment on the phosphorus-silicon glass layer, the tunneling passivation material layer and the N-type doped polycrystalline silicon material layer that are stacked, to form a tunneling passivation layer and an N-type doped polycrystalline silicon layer that are stacked on a local region of the second surface;
• and
• removing the remaining phosphorus-silicon glass layer.