Semiconductor device and manufacturing method thereof

A method of forming a semiconductor device having a metal-insulator-metal (MIM) capacitor and a thin-film resistor, the method comprising:

• a) forming a multilayer structure comprising a lower metal layer, a first dielectric layer located on the lower metal layer, an upper metal layer located on the first dielectric layer, and a solder layer located on the upper metal layer;
• b) performing patterned etch on the multilayer structure to form a first structure and a second structure separated from each other;
• c) etching part of the solder layer in the second structure to expose part of the upper surface of the upper metal layer, wherein the remaining solder layer is configured as electrodes of the thin-film resistor;
• d) forming a set of conductive channels respectively correspondingly connected to the first structure and the second structure;
• and
• e) wherein the lower metal layer of the first structure is configured as a lower plate of the MIM capacitor, the upper metal layer of the first structure is configured as an upper plate of the MIM capacitor, and the upper metal layer of the second structure is configured as a thin-film metal layer of the thin-film resistor.