Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsJoonyong Kim, Sanghyun Kim, Jongseob Kim, Junhyuk Park, Seong Seok Yang, Jaejoon Oh
Estimating the term…
A semiconductor device includes a channel layer, a barrier layer on the channel layer, a gate electrode layer on the barrier layer and extending in a first direction parallel to an upper surface of the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode layer, a source electrode and a drain electrode connected to the channel layer and spaced apart from the gate electrode layer in a second direction parallel to the upper surface of the barrier layer and different from the first direction, and a first barrier layer doping region within the barrier layer and connected to the source electrode. In a cross-section in the second direction and in a third direction perpendicular to the upper surface of the barrier layer, an upper surface length of the gate electrode layer is less than a lower surface length of the gate electrode layer.
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.