Transistor device and method for producing thereof

A method for producing a transistor device,

• wherein the transistor device comprises:
• a semiconductor body;
• a drift region of a first doping type in the semiconductor body;
• a gate pad formed above a first surface of the semiconductor body;
• a shielding structure arranged between the gate pad and the drift region and comprising shielding electrodes each arranged in a respective shielding trench and dielectrically insulated from the gate pad and the semiconductor body;
• a source pad formed above the first surface of the semiconductor body and connected to the shielding electrodes;
• and
• transistor cells each comprising a gate electrode connected to the gate pad, and
• wherein the method comprises:
• forming the shielding electrodes and the gate electrodes by the same process sequence.

A method, comprising:

• forming a semiconductor body;
• forming a drift region of a first doping type in the semiconductor body;
• forming a gate pad above a first surface of the semiconductor body;
• forming a shielding structure arranged between the gate pad and the drift region and comprising shielding electrodes each arranged in a respective shielding trench and dielectrically insulated from the gate pad and the semiconductor body;
• forming a source pad above the first surface of the semiconductor body and connected to the shielding electrodes;
• and
• forming transistor cells each comprising a gate electrode connected to the gate pad.