Multiplexing distinct signals on a single pin of a memory device
AssigneeLodestar Licensing Group LLC
InventorsRobert Nasry Hasbun, Timothy M. Hollis, Jeffrey P. Wright, Dean D. Gans
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Abstract
Methods, systems, and devices for multiplexing distinct signals on a single pin of a memory device are described. Techniques are described herein to multiplex data using a modulation scheme having at least three levels. The modulated data may be communicated to multiple memory dies over a shared bus. Each of the dies may include a same or different type of memory cell and, in some examples, a multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the modulated signal may be configured to represent a plurality of bits of data.
Claims20
A method at a memory device, comprising:
- generating a symbol of a pulse-amplitude-modulated (PAM) signal that indicates first information of a first type of metadata and second information of a second type of metadata different than the first type of metadata, wherein the symbol is generated in accordance with a PAM scheme that has at least three levels;
- transmitting, over a bus in accordance with a first clock frequency and the PAM scheme, the symbol of the PAM signal that indicates the first information of the first type of metadata and the second information of the second type of metadata;
- and
- switching from transmitting over the bus in accordance with the PAM scheme and the first clock frequency to transmitting over the bus in accordance with a non-return-to-zero (NRZ) modulation scheme and a second clock frequency different than the first clock frequency.
A memory device, comprising:
- a memory die;
- and
- a memory controller coupled with the memory die, the memory controller configured to cause the memory device to:
- generate a symbol of a pulse-amplitude-modulated (PAM) signal that indicates first information of a first type of metadata and second information of a second type of metadata different than the first type of metadata, wherein the symbol is generated in accordance with a PAM scheme that has at least three levels;
- transmit, over a bus in accordance with a first clock frequency and the PAM scheme, the symbol of the PAM signal that indicates the first information of the first type of metadata and the second information of the second type of metadata;
- and
- switch from transmitting over the bus in accordance with the PAM scheme and the first clock frequency to transmitting over the bus in accordance with a non-return-to-zero (NRZ) modulation scheme and a second clock frequency different than the first clock frequency.
A memory device, comprising:
- a bus coupled with a host device;
- and
- a volatile memory die, the memory device configured to:
- generate a symbol of a pulse-amplitude-modulated (PAM) signal that indicates first information of a first type of metadata and second information of a second type of metadata different than the first type of metadata, wherein the symbol is generated in accordance with a PAM scheme that has at least three levels;
- transmit, over the bus in accordance with a first clock frequency and the PAM scheme, the symbol of the PAM signal that indicates the first information of the first type of metadata and the second information of the second type of metadata;
- and
- switch from transmitting over the bus in accordance with the PAM scheme and the first clock frequency to transmitting over the bus in accordance with a non-return-to-zero (NRZ) modulation scheme and a second clock frequency different than the first clock frequency.
Dependencies are inferred from the claim text.